Selected Publications (Dr. K. Ohmori)

IEDM (International Electron Devices Meeting)

  1. A. Suzuki, T. Kamioka, Y. Kamakura, K. Ohmori, K. Yamada, and T. Watanabe
    “Source-induced RDF Overwhelms RTN in Nanowire Transistor: Statistical Analysis with Full Device EMC/MD Simulation Accelerated by GPU Computing”
    2014 IEDM
  2. Takefumi Kamioka, Hiroya Imai, Yoshinari Kamakura, Kenji Ohmori, Kenji Shiraishi, Masanori Niwa, Keisaku Yamada, and Takanobu Watanabe
    “Current fluctuation in sub-nano second regime in gate-all-around nanowire channels studied with ensemble Monte Carlo/molecular dynamics simulation”
    2012 IEDM
  3. W. Feng, R. Hettiarachchi, Y. Lee, S. Sato, K. Kakushima, M. Sato, K. Fukuda, M. Niwa, K. Yamabe, K. Shiraishi, H. Iwai, and K. Ohmori
    “Fundamental origin of excellent low-noise property in 3D Si-MOSFETs ~ Impact of charge-centroid in the channel due to quantum effect on 1/f noise ~”
    2011 IEDM
  4. T. Nakayama, K. Kakushima, O. Nakatsuka, Y. Machida, S. Sotome, T. Matsuki, K. Ohmori, H. Iwai, S. Zaima, T. Chikyow, K. Shiraishi, and K. Yamada
    “Theory of Workfunction Control of Silicides by Doping for Future Si-Nano-Devices Based on Fundamental Physics of Why Silicides Exist in Nature”
    2010 IEDM
  5. R. Hasunuma, C. Tamura, T. Nomura, Y. Kikuchi, K. Ohmori, M. Sato, A. Uedono, T. Chikyow, K. Shiraishi, K. Yamada, and K. Yamabe
    “Reversible and Irreversible Degradation Attributing to Oxygen Vacancy in HfSiON Gate Films During Electrical Stress Application”
    2009 IEDM
  6. M. Sato, S. Kamiyama, Y. Sugita, T. Matsuki, T. Morooka, T. Suzuki, K. Shiraishi, K. Yamabe, K. Ohmori, K. Yamada, J. Yugami, K. Ikeda, and Y. Ohji
    “Negatively Charged Deep Level Defects Generated by Yttrium and Lanthanum Incorporation into HfO2 for Vth Adjustment, and the Impact on TDDB, PBTI and 1/f Noise”
    2009 IEDM
  7. K. Ohmori, T. Matsuki, D. Ishikawa, T. Morooka, T. Aminaka, Y. Sugita, T. Chikyow, K. Shiraishi, Y. Nara, and K. Yamada
    “Impact of Additional Factors in Threshold Voltage Variability of Metal/High-k Gate Stacks and Its Reduction by Controlling Crystalline Structures and Grains in the Metal Gates”
    2008 IEDM
  8. K. Ohmori, T. Chikyow, T. Hosoi, H. Watanabe, K. Nakajima, T. Adachi, A. Ishikawa, Y. Sugita, Y. Nara, Y. Ohji, K. Shiraishi, K. Yamabe, and K. Yamada
    “Wide Controllability of Flatband Voltage by Tuning Crystalline Microstructures in Metal Gate Electrodes”
    2007 IEDM
  9. K. Shiraishi, Y. Akasaka, S. Miyazaki, T. Nakayama, T. Nakaoka, G. Nakamura, K. Torii, H. Furutou, A. Ohta, P. Ahmet, K. Ohmori, H. Watanabe, T. Chikyow, M. L. Green, Y. Nara, and K. Yamada
    “Universal theory of workfunctions at metal/Hf-based high-k dielectrics interfaces -Guiding principles for gate metal selection-“
    2005 IEDM

VLSI Symposia

  1. K. Ohmori, A. Shinoda, K. Kawai, Z. Wei, T. Mikawa, and R. Hasunuma
    “Reduction of Cycle-to-Cycle Variability in ReRAM by Filamentary Refresh”
    2017 Symposium on VLSI Technology
  2. Kenji Ohmori, Ryu Hasunuma, Satoshi Yamamoto, Yoshinori Tamura, Hao Jiang, Noboru Ishihara, Kazuya Masu, and Keisaku Yamada
    “Application of Low-Noise TIA ICs for Novel Sensing of MOSFET Noise up to the GHz Region”
    2013 Symposium on VLSI Circuits
  3. K. Ohmori, Ryu Hasunuma, Wei Feng, and Keisaku Yamada
    “Continuous characterization of MOSFET from low-frequency noise to thermal noise using a novel measurement system up to 100 MHz”
    2012 Symposium on VLSI Technology
  4. K. Ohmori, W. Feng, S. Sato, R. Hettiarachchi, M. Sato, T. Matsuki, K. Kakushima, H. Iwai, and K. Yamada
    “Direct Real-Time Observation of Channel Potential Fluctuation Correlated to Random Telegraph Noise of Drain Current Using Nanowire MOSFETs with Four-Probe Terminals”
    2011 Symposium on VLSI Technology
  5. T. Morooka, M. Sato, T. Matsuki, T. Suzuki, K. Shiraishi, A. Uedono, S. Miyazaki, K. Ohmori, K. Yamada, T. Nabatame, T. Chikyow, J. Yugami, K. Ikeda, and Y. Ohji
    “Suppression of Anomalous Threshold Voltage Increase with Area Scaling for Mg- or La-incorporated High-k/Metal Gate nMISFETs in Deeply Scaled Region”
    2010 Symposium on VLSI Technology

Selected Papers

  1. K. Ohmori and S. Amakawa
    “Variable-Temperature Noise Characterization of N-MOSFETs Using an In-Situ Broadband Amplifier”
    Journal of the Electron Devices Society 9 (2021) pp. 1227 – 1236.
  2. Kenji Ohmori and Shuhei Amakawa
    “Direct White Noise Characterization of Short-Channel MOSFETs”
    IEEE Transactions on Electron Devices 68 (2021) pp. 1478–1482.
  3. W. Feng, H. Shima, K. Ohmori, and H. Akinaga
    “Investigation of switching mechanism in HfOx-ReRAM under low power and conventional operation modes”
    Scientific reports 6 (2016) pp. 1-8.
  4. Tomofumi Zushi, Kenji Ohmori, Keisaku Yamada, and Takanobu Watanabe
    “Effect of a SiO2 layer on the thermal transport properties of <100> Si nanowires: A molecular dynamics study”
    Physical Review B 91 (2015) 115308.
  5. W. Feng, C. M. Dou, M. Niwa, K. Yamada, and K. Ohmori
    “Impact of Random Telegraph Noise Profiles on Drain-Current Fluctuation during Dynamic Gate Bias”
    IEEE Electron Device Letters 35 (2014) pp. 3-5.
  6. Christoph M. Puetter, Satoru Konabe, Yasuhiro Hatsugai, Kenji Ohmori, and Kenji Shiraishi
    “Interacting Electron Wave Packet Dynamics in a Two-Dimensional Nanochannel”
    Applied Physics Express 6 (2013) 065201.
  7. Wei Feng, Ranga Hettiarachchi, Soshi Sato, Kuniyuki Kakushima, Masaaki Niwa, Hiroshi Iwai, Keisaku Yamada, and Kenji Ohmori
    “Advantages of Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect Transistors over Planar Ones in Noise Properties”
    Japanese Journal of Applied Physics 51 (2012) 04DC06 (5 pages).
  8. Ranga Hettiarachchi, Takeo Matsuki, Wei Feng, Keisaku Yamada, and Kenji Ohmori
    “Behavior of Low-Frequency Noise in n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors for Different Impurity Concentrations”
    Japanese Journal of Applied Physics 50 (2011) 10PB04 (5 pages).
  9. Takeo Matsuki, Ranga Hettiarachchi, Wei Feng, Kenji Shiraishi, Keisaku Yamada, and Kenji Ohmori
    “Impact of Nitrogen Incorporation on Low-Frequency Noise of Polycrystalline Silicon/TiN/HfO2/SiO2 Gate-Stack Metal–Oxide–Semiconductor Field-Effect Transistors”
    Japanese Journal of Applied Physics 50 (2011) 10PB02 (5 pages).
  10. Soshi Sato, Kuniyuki Kakushima, Kenji Ohmori, Kenji Natori, Keisaku Yamada, and Hiroshi Iwai
    “Electrical characteristics of asymmetrical silicon nanowire field-effect transistors”
    Appl. Phys. Lett. 99 (2011) 223518.
  11. Soshi Sato, Wei Li, Kuniyuki Kakushima, Kenji Ohmori, Kenji Natori, Keisaku Yamada, and Hiroshi Iwai
    “Extraction of additional interfacial states of silicon nanowire field-effect transistors”
    Appl. Phys. Lett. 98 (2011) 233506.
  12. S. Sato, K. Ohmori, K. Kakushima, P. Ahmet, K. Natori, K. Yamada, and H. Iwai
    “Experimental Characterization of Quasi-Fermi Potential Profile in the Channel of a Silicon Nanowire Field-Effect Transistor with Four-Terminal Geometry”
    Applied Physics Express 4 (2011) 044201.
  13. Dmitry Kukuruznyak, Harald Reichert, Kenji Ohmori, Parhat Ahmet, and Toyohiro Chikyow
    “Pliant epitaxial ionic oxides on silicon”
    Advanced Materials 20 (2008) 3827.
  14. K. Ohmori, P. Ahmet, M. Yoshitake, T. Chikyow, K. Shiraishi, K. Yamabe, H. Watanabe, Y. Akasaka, Y. Nara, K.-S. Chang, M. L. Green, and K. Yamada
    “Influences of annealing in reducing and oxidizing ambients on flatband voltage properties of HfO2 gate stack structures”
    J. Appl. Phys. 101 (2007) 084118.
  15. T.-Y. Lee, K. Ohmori, C.-S. Shin, David. G. Cahill, I. Petrov, and J.E. Greene
    “Elastic constants of single-crystal TiNx (001) (0.67 < x < 1.0) determined as a function of x by picosecond ultrasonic measurements”
    Physical Review B 71 (2005) 144106.
  16. Kenji Ohmori, Y.L. Foo, Sukwon Hong, J.G. Wen, J.E. Greene, and I. Petrov
    “Directed self-assembly of Ge nanostructures on very high index, highly anisotropic Si(hkl) surfaces”
    Nano Letters 5 (2005) 369.
  17. S. Kodambaka, Navot Israeli, J. Bareño, W. Święch, K. Ohmori, I. Petrov, and J. E. Greene
    “Low-energy electron microscopy studies of interlayer mass transport kinetics on TiN(111)”
    Surface Science 560 (2004) 53.
  18. S. Kodambaka, S. V. Khare, W. Święch, K. Ohmori, I. Petrov, and J. E. Greene
    “Dislocation-driven surface dynamics on solid”
    Nature 429 (2004) 49.
  19. S. Hong, Y. L. Foo, K. A. Bratland, T. Spila, K. Ohmori, M. R. Sardela, Jr., and J. E. Greene
    “Smooth relaxed Si0.75Ge0.25 layers on Si(001) via in-situ rapid thermal annealing”
    Appl. Phys. Lett. 83 (2003) 4321.
  20. Benjamin Cho, Thomas Schwarz-Selinger, Kenji Ohmori, David G. Cahill, and J. E. Greene
    “Effect of growth rate on the spatial distributions of dome-shaped Ge islands on Si(001)”
    Phys. Rev. B 66 (2002) 195407.
  21. Kenji Ohmori, Tomokazu Goto, Hiroya Ikeda, Akira Sakai, Shigeaki Zaima, and Yukio Yasuda
    “Microscopic Observation of X-ray Irradiation Damages in Ultra-Thin SiO2 Films”
    Jpn. J. Appl. Phys. 40 (2001) 2823.
  22. Hiroshi Ikegami, Kenji Ohmori, Hiroya Ikeda, Hirotaka Iwano, Shigeaki Zaima, and Yukio Yasuda
    “Oxide formation on Si(100)-2×1 surfaces studied by scanning tunneling microscopy/scanning tunneling spectroscopy”
    Jpn. J. Appl. Phys. 35 (1996) pp. 1593-1597.